CHA6005-QEG_15 Datasheet, PDF (4/12 Pages) United Monolithic Semiconductors – 8-12GHz High Power Amplifier

CHA6005-QEG
8-12GHz High Power Amplifier
Device Thermal Performances
All the figures given in this section are obtained assuming that the QFN device is only cooled
down by conduction through the package thermal pad (no convection mode considered).
The temperature is monitored at the package back-side interface (Tcase) as shown below.
The system maximum temperature must be adjusted in order to guarantee that Tcase
remains below the maximum value specified in the next table. So, the system PCB must be
designed to comply with this requirement.
A derating must be applied on the dissipated power if the Tcase temperature cannot be
maintained below the maximum temperature specified (see the curve Pdiss. Max) in order to
guarantee the nominal device life time (MTTF).
DEVICE THERMAL SPECIFICATION : CHA6005-QEG
Recommended max. junction temperature (Tj max)
:
173 °C
Tj absolute maximum rating for 20 years minimum life time :
175 °C
Max. continuous dissipated power (Pdiss. Max.)
:
2.9 W
=> Pdiss. Max. derating above Tcase⁽¹⁾= 85
Junction-Case thermal resistance (Rth J-C)⁽²⁾
°C :
:
33 mW/°C
<30 °C/W
Minimum Tcase operating temperature⁽³⁾
:
-40 °C
Maximum Tcase operating temperature⁽³⁾
:
85 °C
Minimum storage temperature
:
-55 °C
Maximum storage temperature
:
150 °C
(1) Derating at junctio n temperature co nstant = Tj max.
(2) Rth J-C is calculated fo r a wo rst case co nsidering the ho t t e s t junc t io n o f the M M IC and all the devices biased.
(3) Tcase=P ackage back side temperature measured under the die-attach-pad (see the drawing belo w).
3.5
Tcase
3
2.5
2
1.5
1
Pdiss. Max. @Tj <Tj max (W)
0.5
-50 -25 0
0
25 50 75 100 125 150 175
Example: QFN 16L 3x3
Location of temperature
reference point (Tcase)
on package's bottom side
Tcase (°C)
6.4
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
4/12
Specifications subject to change without notice
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