CHA6005-QEG_15 Datasheet, PDF (3/12 Pages) United Monolithic Semiconductors – 8-12GHz High Power Amplifier

8-12GHz High Power Amplifier
CHA6005-QEG
Absolute Maximum Ratings ⁽¹⁾
Tamb.= +25°C
Symbol
Parameter
Values
Unit
VD
Drain bias voltage
9.0
V
Id
Drain bias current
700
mA
VG Gate bias voltage
-0.25
V
Pin Maximum peak input power overdrive
+18
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) _{Operation of this device above anyone of these parameters may cause permanent}
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad N^o
VD1,2
17, 13
VG12
18
Parameter
Drain supply voltage
Gate supply voltage
Values Unit
8
V
-0.7
V
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
3/12
Specifications subject to change without notice
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