CHA6005-QEG_15 Datasheet, PDF (1/12 Pages) United Monolithic Semiconductors – 8-12GHz High Power Amplifier

CHA6005-QEG
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-QEG is a high power amplifier
monolithic circuit, which integrates two
stages and produces 31.5dBm output power
associated to a high power added efficiency
of 33%.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a RoHS compliant SMD
package.
Main Features
■ High power: 31.5dBm
■ High PAE: 33%
■ Frequency band: 8-12GHz
■ Linear gain: 20dB
■ DC bias: VD=8Volt@Id=420mA
■ 24L-QFN4x5
■ MSL3
50
45
40
35
30
25
20
15
10
5
0
7
0.7
0.6
0.5
0.4
0.3
Pout_1dBcomp
Linear Gain
8
9
10 11
Frequency (GHz)
ID (A)
0.2
12 13
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G
Linear Gain
P1dB Output Power @ 1dB comp.
PAE1dB Power Added Efficiency @ 1dB comp.
Min Typ Max Unit
8
12 GHz
20
dB
31.5
dBm
33
%
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
1/12
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone]