CHA6005-QEG_15 Datasheet, PDF (2/12 Pages) United Monolithic Semiconductors – 8-12GHz High Power Amplifier

CHA6005-QEG
8-12GHz High Power Amplifier
Electrical Characteristics
Tamb.= +25°C, VD1,2 = +8.0V
Symbol
Parameter
Min
Typ Max Unit
Freq
Operating frequency
8
12 GHz
G
Small signal gain
19.5
dB
RLin
Input Return Loss
14
dB
RLout
Output Return Loss
10
dB
P1dB
Output power @ 1dBcomp
31.5
dBm
P3dB
Output power @ 3dBcomp
32
dBm
PAE1dB Power Added Efficiency @ 1dBcomp
33
%
PAE3dB Power Added Efficiency @ 3dBcomp
35
%
Id_1dBcomp Supply drain current @ 1dBcomp
500
mA
Id_3dBcomp Supply drain current @ 3dBcomp
550
mA
Idq
Supply quiescent current
420
mA
VG
Gate supply voltage
-0.7
V
These values are representative of onboard measurements and are defined in the reference
plan as defined in the paragraph "Definition of reference planes ".
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
2/12
Specifications subject to change without notice
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