CHK015A-QIA Datasheet, PDF (2/18 Pages) United Monolithic Semiconductors – 15W Power Packaged Transistor

CHK015A-QIA
15W Power Packaged Transistor
Recommended DC Operating Ratings
Tcase= +25°C
Symbol
Parameter
Min Typ
V_DS
Drain to Source Voltage
V_{GS_Q}
Gate to Source Voltage
-1.9
I_{D_Q}
I_{D_MAX}
Quiescent Drain Current
Drain Current
0.1
0.65
I_{G_MAX}
Gate Current (forward
0
mode)
T_{j_MAX}
Junction temperature⁽¹⁾
(1) _{Power dissipation must be considered}
Max
50
0.35
(1)
24
Unit
V
V
A
A
mA
Conditions
V_D=50V. I_{D_Q}=100mA
V_D=50V
V_D=50V. compressed
mode
Compressed mode
200 °C
DC Characteristics
Tcase= +25°C
Symbol
Parameter
Min Typ Max Unit
Conditions
V_P
I_{D_SAT}
I_{G_leak}
Pinch-Off Voltage
-3
-2
-1
Saturated Drain Current
2.7 ⁽¹⁾
Gate Leakage Current -0.8
(reverse mode)
V V_D=50V. I_D= I_DSS /100
A V_D=7V. V_G=2V
mA V_D=50V. V_G=-7V
V_BDS
Drain-Source
180
V V_G=-7V. I_D=20mA
Break-down Voltage
R_TH
Thermal Resistance ⁽²⁾
6
°C/W CW
(1) _{For information, limited by ID_MAX . see on Absolute Maximum Ratings}
(2) _{CW mode, reference = package back-side}
RF Characteristics
Tcase= +25°C. Pulsed mode
Symbol
Parameter
Min Typ Max Unit
Conditions
G_SS
Small Signal Gain @ 3GHz
18 20
Small Signal Gain @ 6GHz
11 13
dB V_D=50V. I_{D_Q}=100mA
dB
P_SAT
PAE
Saturated Output Power
Max PAE @ 3GHz
Max PAE @ 6GHz
15 20
60
50
W V_D=50V. I_{D_Q}=100mA
% V_D=50V. I_{D_Q}=100mA
%
G_{PAE_MAX}
Associated Gain at Max PAE
@ 3GHz
@ 6GHz
V_D=50V. I_{D_Q}=100mA
16
dB
9
dB
These values are the intrinsic performance of the packaged device. They are deduced from
measurements and simulations. They are considered in the reference plane defined by the
leads of the package, at the connection interface with the PCB.
The typical performance achievable in more than 10% frequency band around 3GHz was
demonstrated using the reference board 61502522 presented hereafter.
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
2/18
Specifications subject to change without notice
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