CHK015A-QIA Datasheet, PDF (1/18 Pages) United Monolithic Semiconductors – 15W Power Packaged Transistor

CHK015A-QIA
15W Power Packaged Transistor
GaN HEMT on SiC
Description
The CHK015A-QIA is an unmatched
packaged Gallium Nitride High Electron
Mobility Transistor.
It offers general purpose and broadband
solutions for a variety of RF power
applications. It is well suited for multi-purpose
applications such as radar and
telecommunication.
The CHK015A-QIA is developed on a 0.5µm
gate length GaN HEMT process. It requires
an external matching circuitry.
It is proposed in low cost plastic package
providing low parasitic and low thermal
resistance.
Main Features
■ Wide band capability: up to 6GHz
■ Pulsed and CW operating modes
■ High power: > 15W
■ High Efficiency: up to 70%
■ DC bias: Vd=50Volt @ Id=100mA
■ Low cost package: 14L-DFN3x4
■ MTTF > 10⁶ hours @ Tj=200°C
VDS = 50V, ID_Q = 100mA, Freq = 2.9GHz
Pulsed mode (100µs, 10%)
55
1.8
50
1.6
45
1.4
40
Pout
1.2
35
1
30
PAE
25
20
15
0.8
0.6
ID
Gain
0.4
0.2
10
0
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Input Power (dBm)
Performances on S-band Evaluation Board
Main Electrical Characteristics
Tcase= +25°C, Pulsed mode, F = 3GHz, V_DS=50V, I_{D_Q}=100mA
Symbol
Parameter
Min Typ Max Unit
Gain Linear Gain
18
20
dB
Pout Output Power
15
20
W
PAE Max Power Added Efficiency
60
%
G_{PAE_MAX} Associated Gain at Max PAE
16
dB
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
1/18
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: [phone] - Fax: [phone] - www.ums-gaas.com