CHK015A-QIA Datasheet, PDF (10/18 Pages) United Monolithic Semiconductors – 15W Power Packaged Transistor

CHK015A-QIA
15W Power Packaged Transistor
Typical Performance in Temperature (on Evaluation Board)
Calibration and measurements are done on the connector access planes of the evaluation
boards.
Tamb. = -40°C, +80°C, Pulsed Mode ⁽¹⁾, V_DS=50V, I_{D_Q}=100mA
Pout, PAE, Gain & Id @ 2.9GHz & -40°C
55
1.8
50
-40°C
1.6
45
1.4
40
Pout
1.2
35
1
30
PAE
25
20
15
0.8
0.6
ID
Gain
0.4
0.2
10
0
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
Input Power (dBm)
Pout, PAE, Gain & Id @ 2.9GHz & +80°C
55
1.8
50
80°C
1.6
45
1.4
40
Pout
1.2
35
1
30
PAE
0.8
25
ID
0.6
20
Gain
0.4
15
0.2
10
0
15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
Input Power (dBm)
(1) _{Input RF and gate voltage are pulsed. Conditions are 100µs width, 10% duty cycle and 1µs}
offset between DC and RF pulse.
Ref. : DSCHK015A-QIA5357 - 23 Dec 15
10/18
Specifications subject to change without notice
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