TGS2355-SM_15 Datasheet, PDF (5/13 Pages) TriQuint Semiconductor – 0.5-6 GHz 100 Watt GaN Switch

TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Typical Performance
Test conditions unless otherwise noted: parts mounted to EVB (page 9), Pulsed Input Power PW=100 us, DC=10%, T=+25 °C
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
35
Compression vs. Pin vs. Freq.
V_C1 = 0 V, V_C2 = -40 V, Temp. = 25 °C
0.1 GHz
0.3 GHz
0.5 GHz
0.2 GHz
0.4 GHz
1.0 GHz
38
41
44
47
50
Input Power (dBm)
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
35
Compression vs. Pin vs. Freq.
V_C1 = 0 V, V_C2 = -40 V, Temp. = 25 °C
2.0 GHz
3.0 GHz
4.0 GHz
5.2 GHz
6.0 GHz
38
41
44
47
50
Input Power (dBm)
0.2
0.1
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
35
Compression vs. Pin vs. Temp.
V_C1 = 0 V, V_C2 = -40 V, Freq. = 3.0 GHz
- 40 °C
+25 °C
+85 °C
38
41
44
47
50
Input Power (dBm)
0.2
Compression vs. Pin vs. V_C
0.1
V_C1 = 0 V, Freq. = 3.0 GHz, Temp. = 25 °C
0.0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
VC2 = -20 V
VC2 = -30 V
-0.7
VC2 = -40 V
-0.8
-0.9
-1.0
35
38
41
44
47
50
Input Power (dBm)
Harmonic vs. Output Power
0
V_C1 = -40 V, V_C2 = 0 V, F0 = 3 GHz (CW)
-10
-20
2*F0 -40 °C
3*F0 -40 °C
-30
2*F0 25 °C
3*F0 25 °C
2*F0 85 °C
3*F0 85 °C
-40
-50
-60
-70
-80
35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm)
Harmonic vs. Output Power
0
V_C1 = -40 V, V_C2 = 0 V, F0 = 4 GHz (CW)
-10
-20
2*F0 -40 °C
3*F0 -40 °C
-30
2*F0 25 °C
3*F0 25 °C
2*F0 85 °C
3*F0 85 °C
-40
-50
-60
-70
-80
35 36 37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm)
Datasheet: Rev - 07-18-14
© 2014 TriQuint
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