TGS2355-SM_15 Datasheet, PDF (3/13 Pages) TriQuint Semiconductor – 0.5-6 GHz 100 Watt GaN Switch

TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Specifications
Thermal and Reliability Information
Parameter
Conditions
Value
Units
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH) ⁽¹⁾
Median Lifetime (TM)
TBASE = 85 °C, VC1 = 0 V, VC2 = -40 V,
PIN = 100 W (CW), PDISS =29.3 W (CW)
4.37
213
4.15E06
ºC/W
°C
Hrs
Thermal Resistance (θJC) ⁽¹⁾
Channel Temperature (TCH) ⁽¹⁾
Median Lifetime (TM)
TBASE = 85 °C, VC1 = 0 V, VC2 = -40 V,
PIN = 100 W, PDISS =29.3 W, Pulsed
Power: PW = 100 us, DC = 10 %
1.88
140
5.43E09
ºC/W
°C
Hrs
Notes:
1.MMIC attached to 12 mil AlN QFN base using 0.8 mil thick Diemat 6030HK epoxy. Thermal resistance is determined from
the channel to the back of the package (fixed 85 °C temperature).
Median Lifetime
Test Conditions: 40 V; Failure Criteria = 10% reduction in ID MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25 50 75 100 125 150 175 200 225 250 275
Channel Temperature, T_CH (°C)
Peak Temperature vs. CW Power
12-mil AlN, 6030HK Die Attach; Pkg base = 85 °C
245
225
205
185
Tch,max for 12-mil AlN Pkg Base
Recommended Limit for Tch,max
165
145
125
105
85
0
15
30
45
60
75
90 105
RF Input Power, Watts
Maximum Channel Temperature
0.012" AlN with 6030HK, Tbase=85 °C, Pin=100 W
220
210
200
190
180
170
160
5% Duty Cycle
150
10% Duty Cycle
140
20% Duty Cycle
130
50% Duty Cycle
10% duty cycle
120
100 us pulse
110
100
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
Pulse Width (sec)
Datasheet: Rev - 07-18-14
© 2014 TriQuint
- 3 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com