TGS2355-SM_15 Datasheet, PDF (2/13 Pages) TriQuint Semiconductor – 0.5-6 GHz 100 Watt GaN Switch

TGS2355-SM
0.5-6 GHz 100 Watt GaN Switch
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Control Voltage (VC)
Control Current (IC)
Power Dissipation
RF Input Power (pulsed, 10% Duty
Cycle, 20us pulse width)
Channel Temperature, TCH
Mounting Temperature (30 sec)
Rating
-50 V
-3.5 / +3.5 mA
35 W
50.5 dBm
275 °C
320 °C
Storage Temperature
-55 to 150 °C
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Parameter
Min Typ Max Units
Frequency
0.5
6 GHz
Input Power Handling
(pulsed)
≤ 50
dBm
Control Voltage
-40
V
Channel Temp., Tch
≤ 225
°C
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: Temp= +25°C. Z0 = 50 Ω, Vc = -40 V, parts mounted to EVB (page 9)
Parameter
Min
Typ
Max
Operational Frequency Range
0.5
6
P-0.1dB (pulse)
48
Control Current (IC)
1.0
Insertion Loss (On-State) 0.5-4.0 GHz
< 0.7
Insertion Loss (On-State) 4.0-6.0 GHz
< 1.1
Input Return Loss – On-State (Common Port RL)
> 15
Output Return Loss – On-State (Switched Port RL)
> 15
Isolation (Off-State)
40
Output Return Loss – Off-State (Isolated Port RL)
>1
Switching Speed (10-90%, 90-10%, VC=-20V)
50
Third Order Intermodulation Distortion (FC=4 GHz)
< -46
Second Harmonic Level (F0=4 GHz)
< -40
Control Voltage
-40
-48
Insertion Loss Temperature Coefficient
0.004
Units
GHz
dBm
mA
dB
dB
dB
dB
dB
dB
ns
dBc
dBc
V
dB/ °C
Datasheet: Rev - 07-18-14
© 2014 TriQuint
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Disclaimer: Subject to change without notice
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