CLY2_15 Datasheet, PDF (4/8 Pages) TriQuint Semiconductor – High-Power Packaged GaAs FET

CLY2 Datasheet
Electrical Characteristics (cont)
Output characteristics
0.50
0.45
0.40
0.35
VG=0 V
VG=-0,5V
0.30
VG=-1,0V
0.25
VG=-1,5V
0.20
VG=-2V
VG=-2,5V
0.15
Ptot DC
0.10
0.05
0.00
0
1
2
3
4
5
6
7
Drain-Source Voltage [V]
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS = 0.5 Idss
P1dB
η_D
40
80
[dBm]
[%]
35
70
30
60
25
50
20
40
15
30
10
20
5
10
0
0 1 23 4
Drain-Source Voltage
0
5 [V] 6
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5
Revision C, December 14, 2005