CLY2_15 Datasheet, PDF (3/8 Pages) TriQuint Semiconductor – High-Power Packaged GaAs FET

CLY2 Datasheet
Electrical Characteristics (cont)
1dB-Compression Point
P_1dB
-
23.5
-
dBm
V_DS = 3 V I_D = 180 mA f = 1.8 GHz
1dB-Compression Point
P_1dB
-
27.0
-
dBm
V_DS = 5 V I_D = 180 mA f = 1.8GHz
Power Added Efficiency
PAE
-
55
-
%
V_DS = 3 V I_D = 180 mA f = 1.8 GHz
Pin = 10 dBm
Noise figure
NF
1.48
dB
V_DS = 3 V I_D = 180 mA f = 1.8GHz
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match: Γ_ms: MAG = 0.74, ANG 132°; Load Match: Γ_ml: ;MAG 0.61, ANG -153°
For additional information and latest specifications, see our website: www.triquint.com
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Revision C, December 14, 2005