CLY2_15 Datasheet, PDF (2/8 Pages) TriQuint Semiconductor – High-Power Packaged GaAs FET

CLY2 Datasheet
Maximum Ratings
Parameter
Symbol
Values
Unit
Drain-source voltage
V_DS
9
V
Drain-gate voltage
V_DG
12
V
Gate-source voltage
V_GS
-6
V
Drain current
I_D
600
mA
Channel temperature
T_Ch
150
°C
Storage temperature
T_stg
-55...+150
°C
Total power dissipation (Ts < 50 °C) ¹⁾
P_tot
900
mW
Thermal Resistance
Channel-soldering point ¹⁾
RthChS
≤110
K/W
1)_{Ts: Temperature at soldering point}
Electrical Characteristics
(T_A = 25°C , unless otherwise specified)
Parameter
Symbol
Drain-source saturation current
V_DS = 3 V V_GS = 0 V
Drain-source pinch-off current
V_DS = 3 V V_GS = -3.8 V
Gate pinch-off current
V_DS = 3 V V_GS = -3.8 V
Pinch-off Voltage
V_DS= 3 V I_D=50µA
Small Signal Gain*)
V_DS = 5 V I_D = 180 mA
Pin = -5 dBm
Small Signal Gain*)
f = 1.8 GHz
V_DS = 3 V I_D = 180 mA
Pin = -5 dBm
Output Power
f = 1.8 GHz
V_DS = 3 V I_D = 180 mA f = 1.8 GHz
Pin = 10 dBm
I_DSS
I_D
I_G
VGS(p)
G
G
P_o
min
300
-
-
-3.8
-
-
22.5
typ
450
5
5
-2.8
15.5
14.5
23.5
max
650
50
20
-1.8
-
-
-
Unit
mA
µA
µA
V
dB
dB
dBm
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3
Revision C, December 14, 2005