CLY2_15 Datasheet, PDF (1/8 Pages) TriQuint Semiconductor – High-Power Packaged GaAs FET

CLY2
Datasheet
High-Power Packaged GaAs FET
Description
The CLY2 is a high-breakdown voltage GaAs
FET designed for PA driver applications in the
400 MHz to 3 GHz frequency range. It is ideal
for portable PA applications in mobile phones
and portable WLAN transceivers due to its
easy matching and excellent linearity. The
CLY2 exhibits +23.5 dBm output power with
+3V Vds at 1.8 GHz with an associated gain
of 14.5 dB. Power added efficiencies to 55%
are achievable.
Features
• For frequencies up to 3 GHz
• Wide operating voltage range: 2 to 6 V
• P_OUT 23.5 dBm typical at V_D=3V,
f=1.8GHz
• High efficiency: better than 55 %
• Nfmin 0.79 dB typical at 900 MHz
• Low Cost
Applications
• Power Amplifiers for
WLAN transceivers
• Driver Amplifiers for
WLAN or mobile
phone basestations
• Low Noise Amplifier
for basestations and
antenna amplifiers
Package Outline,
MW6
4
5
6
3
2
1
Pin Configuration:
1 & 6: Gate
2 & 5: Source
3 & 4: Drain
For additional information and latest specifications, see our website: www.triquint.com
2
Revision C, December 14, 2005