TC9WMA2FK Datasheet, PDF (8/15 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic 2,048-Bit (256 × 8 Bit) Serial E2PROM

TC9WMA2FK
Electrical Characteristics
D.C. Characteristics (V_CC = 1.8 to 2.7 V, GND = 0 V, T_opr = −40 to 85°C)
Characteristics
Input current
Output leakage current
High level output voltage
Low level output voltage
Quiescent supply current
Supply current during read
Supply current during all
erase/program
Symbol
Test Condition
I_LI
I_LO
V_OH
V_OL
I_OH = −1 mA
I_OH = −500 μA
I_OH = −100 μA
I_OL = 2 mA
I_OL = 500 μA
I_OL = 100 μA
I_CC1
(Note 1)
I_CC2
(Note 2)
I_CC3
(Note 3)
1.8 V ^<= V_CC < 2.3 V
Min
Max
2.3 V ^<= V_CC < 2.7 V
Unit
Min
Max
⎯
±1
⎯
±1
μA
⎯
±1
⎯
±1
μA
⎯
⎯
⎯
⎯
⎯
⎯
V_CC − 0.4
⎯
V
V_CC − 0.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.4
⎯
V
0.2
⎯
⎯
⎯
⎯
5
⎯
5
μA
⎯
0.5
⎯
1.0
mA
⎯
⎯
⎯
1.0
mA
D.C. Characteristics (V_CC = 2.7 to 5.5 V, GND = 0 V, T_opr = −40 to 85°C)
Characteristics
Input current
Output leakage current
High level output voltage
Low level output voltage
Quiescent supply current
Supply current during read
Supply current during all
erase/program
Symbol
Test Condition
I_LI
I_LO
I_OH = −1 mA
V_OH
I_OH = −500 μA
I_OH = −100 μA
I_OL = 2 mA
V_OL
I_OL = 500 μA
I_OL = 100 μA
I_CC1
(Note 1)
I_CC2
(Note 2)
I_CC3
(Note 3)
2.7 V ^<= V_CC < 3.6 V
Min
Max
4.5 V ^<= V_CC ^<= 5.5 V
Unit
Min
Max
⎯
±1
⎯
±1
μA
⎯
±1
⎯
±1
μA
V_CC − 0.4
⎯
V_CC − 0.4
⎯
⎯
⎯
⎯
⎯
V
⎯
⎯
⎯
⎯
0.4
⎯
0.4
⎯
⎯
⎯
⎯
⎯
V
⎯
⎯
⎯
⎯
⎯
5
⎯
5
μA
⎯
1.5
⎯
2.5
mA
⎯
1.0
⎯
2.0
mA
Note 1: CS = 1 (except when busy, however)
Note 2: Current that flows for a period between a fall of the 14th CLK pulse and a rise of the 16th CLK pulse
when executing the Read instruction.
Note 3: Current that flows while executing the Erase All or Program instruction.
8
2007-10-19