TC9WMA2FK Datasheet, PDF (11/15 Pages) Toshiba Semiconductor – CMOS Digital Integrated Circuits Silicon Monolithic 2,048-Bit (256 × 8 Bit) Serial E2PROM

TC9WMA2FK
E²PROM Characteristics (GND = 0 V, 2.3 V _=< V_{CC =<} 2.7 V, T_opr = −40 to 85°C)
Characteristics
All erase time
Program time
Endurance
Data retention time
Symbol
t_E
t_P
N_EW
t_RET
Test Condition
Min Typ.
⎯
⎯
1 × 10⁵ ⎯
10
⎯
Max Unit
12
ms
12
ms
⎯ Times
⎯ Year
E²PROM Characteristics (GND = 0 V, 3.0 V _=< V_{CC =<} 5.5 V, T_opr = −40 to 85°C)
Characteristics
All erase time
Program time
Endurance
Data retention time
Symbol
t_E
t_P
N_EW
t_RET
Test Condition
Min Typ.
⎯
⎯
1 × 10⁵ ⎯
10
⎯
Max Unit
10
ms
10
ms
⎯ Times
⎯ Year
Capacitance Characteristics (Ta = 25°C)
Characteristics
Input capacitance
Output capacitance
Equivalent Internal capacitance
Symbol
C_IN
C_O
C_PD
f_IN = 1 MHz
Test Condition
V_CC (V) ^{Typ. Unit}
3.3
4
pF
3.3
3
pF
(Note) 3.3
8.5
pF
Note: C_PD denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes while
operating.
The average current consumption during non-loaded operation is obtained from the equations below.
I_{CC (Read)} = f_CLKï½¥C_PDï½¥V_CC + I_CC1 + I_CC2ï½¥3/24
I_{CC (Prog)} = f_CLKï½¥C_PDï½¥V_CC + I_CC1 + I_CC3
11
2007-10-19