TC9WMA1FK Datasheet, PDF (8/12 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic

TC9WMA1FK
E²PROM Characteristics (GND = 0 V, 3.0 V _=< V_{CC =<} 3.6 V, T_opr = -40~85°C)
Characteristics
All erase time
Program time
Endurance
Data retention time
Symbol
t_E
t_P
N_EW
t_RET
Test Condition
Min Typ.
¾
6
¾
6
1 ´ 10⁵ ¾
10
¾
Max Unit
10
ms
10
ms
¾ Times
¾ Year
E²PROM Characteristics (GND = 0 V, 2.7 V _=< V_{CC =<} 3.6 V, T_opr = -40~85°C)
Characteristics
All erase time
Program time
Endurance
Data retention time
Symbol
t_E
t_P
N_EW
t_RET
Test Condition
Min Typ.
¾
7
¾
7
1 ´ 10⁵ ¾
10
¾
Max Unit
13
ms
13
ms
¾ Times
¾ Year
Capacitance Characteristics (Ta = 25°C)
Characteristics
Input capacitance
Output capacitance
Equivalent Internal capacitance
Symbol
C_IN
C_O
C_PD
f_IN = 1 MHz
Test Condition
V_CC (V) ^{Typ. Unit}
3.3
4
pF
3.3
3
pF
(Note5) 3.3
8.5
pF
Note 5:
C_PD denotes the IC’s internal equivalent capacitance calculated from the amount of current it consumes
while operating.
The average current consumption during non-loaded operation is obtained from the equations below.
I_{CC (Read)} = f_CLKï½¥C_PDï½¥V_CC + I_CC1 + I_CC2ï½¥3.5/24
I_{CC (Prog)} = f_CLKï½¥C_PDï½¥V_CC + I_CC1 + I_CC3
8
2001-10-16