TC9WMA1FK Datasheet, PDF (6/12 Pages) Toshiba Semiconductor – TOSHIBA CMOS Digital Integrated Circuits Silicon Monolithic

Maximum Ratings (GND = 0 V)
Characteristics
Power supply voltage
Input voltage
Output voltage
Power dissipation
Soldering temperature (in time)
Storage temperature
Operating temperature
Symbol
V_CC
V_IN
V_OUT
P_D
T_sld
T_stg
T_opr
Rating
Unit
-0.3~4.6
V
-0.3~V_CC + 0.3
V
-0.3~V_CC + 0.3
V
200 (25°C)
mW
260 (10 s)
°C
-55~125
°C
-40~85
°C
TC9WMA1FK
Recommended Operating Conditions (GND = 0 V, T_opr = -40~85°C)
Characteristics
Power supply voltage
Symbol
V_CC
Test Condition
Min Max Unit
2.7 3.6
V
Recommended Operating Conditions (GND = 0 V, V_CC = 2.7~3.6 V, T_opr = -40~85°C)
Characteristics
Low level input voltage
High level input voltage
Operating frequency
Symbol
V_IL
V_IH1
V_IH2
f_CLK
Pin
Test Condition
V_CC = 2.7 V
CS , DI, RST V_CC = 3.6 V
CLK
V_CC = 3.6 V
Min Max Unit
0
0.45
V
1.6 V_CC
V
2.2 V_CC
0
1
MHz
6
2001-10-16