TC55VZM216A Datasheet, PDF (8/11 Pages) Toshiba Semiconductor – 262,144-WORD BY 16-BIT CMOS STATIC RAM

TC55VZM216AJJN/AFTN08,10,12
Note:
(1)
(2)
(3)
(4)
(5)
(6)
Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute.
WE remains HIGH for the Read Cycle.
If CE goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance.
If CE goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high
impedance.
If OE is HIGH during the write cycle, the outputs will remain at high impedance.
The parameters specified below are measured using the load shown in Fig.1.
(A) tCOE, tOEE, tBE, tOEW ^{ŋŋŋŋŋŋŋŋŋŋŋŋ} Output Enable Time
(B) tCOD, tODO, tBD, tODW^{ŋŋŋŋŋŋŋŋŋŋŋŋ} Output Disable Time
CE , OE
UB , LB
WE
D_OUT
(A)
Hi-Z
0.2 V
0.2 V
INDETERMINATE
VALID DATA OUT
(B)
0.2 V
Hi-Z
0.2 V
INDETERMINATE
2003-01-17 8/11