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TC55VZM216A Datasheet, PDF (3/11 Pages) Toshiba Semiconductor – 262,144-WORD BY 16-BIT CMOS STATIC RAM
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TC55VZM216AJJN/AFTN08,10,12
DC RECOMMENDED OPERATING CONDITIONS (Ta = 0° to 70°C)
SYMBOL
PARAMETER
VDD
Power Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
*: −1.0 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.0 V with a pulse width of 20% of tRC min (4 ns max)
MIN
3.0
2.0
−0.3*
TYP
MAX
UNIT
3.3
3.6
V

VDD + 0.3**
V

0.8
V
DC CHARACTERISTICS (Ta = 0° to 70°C, VDD = 3.3 V ± 0.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP MAX UNIT
IIL
ILO
II (NU)
VOH
VOL
IDDO1
IDDO2
IDDS1
IDDS2
Input Leakage Current
(Except NU pin)
VIN = 0 to VDD
−1

Output Leakage
Current
CE = VIH or WE = VIL or OE = VIH,
VOUT = 0 to VDD
−1

Input Leakage Current
(NU pin)
VIN = 0 V
−1

Output High Voltage
IOH = −2 mA
IOH = −100 µA
2.4

VDD − 0.2 
Output Low Voltage
IOL = 2 mA
IOL = 100 µA




Operating Current
CE = VIL, IOUT = 0 mA,
OE = VIH,
Other Input = VIH/VIL
CE = 0.2 V, IOUT = 0 mA,
OE = VDD − 0.2 V,
Other Input = VDD − 0.2 V/0.2 V
tcycle = 8 ns


tcycle = 10 ns


tcycle = 12 ns


tcycle = 8 ns


tcycle = 10 ns


tcycle = 12 ns


Standby Current
CE = VIH, Other Input = VIH or VIL


CE = VDD − 0.2 V, Other Input = VDD − 0.2 V or 0.2 V


1
µA
1
µA
1
µA


V
0.4
0.2
170
160
150
mA
140
130
120
55
mA
4
CAPACITANCE (Ta = 25°C, f = 1 .0 MHz)
SYMBOL
PARAMETER
TEST CONDITION
CIN
Input Capacitance
VIN = GND
CI/O
Input/Output Capacitance
VI/O = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
6
8
UNIT
pF
pF
2003-01-17 3/11
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