TC58NYG1S3EBAI5 Datasheet, PDF (64/65 Pages) Toshiba Semiconductor – MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM

Revision History
Date
2009-07-01
2009-07-09
Rev.
1.00
1.10
2009-07-15 1.20
2009-07-16 1.30
2010-01-25 1.40
2010-05-21 1.50
2010-06-16 1.60
2010-07-13 1.70
2011-03-01 1.80
TC58NYG1S3EBAI5
Description
Original version based on TC58NVG1S3EBAJX_E090701C.pdf
Changed part number and description of “RESTRICTIONS ON PRODUCT USE”.
Modified “FEATURES”.
Revised “APPLICATION NOTES AND COMMENTS ” (14).
Specified weight.
Corrected Device code.
tRST is changed.
Corrected output load.
Corrected typo.
Deleted an invalid description at Page 30.
Deleted Confidential notation.
Changed “RESTRICTIONS ON PRODUCT USE”.
Corrected TIMING DIAGRAM of ID Read.
Changed package drawing.
Deleted TENTATIVE notation.
tR is changed.
64
2011-03-01C