TC58NYG1S3EBAI5 Datasheet, PDF (3/65 Pages) Toshiba Semiconductor – MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM

BLOCK DIAGRAM
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY / BY
I/O
Control circuit
Logic control
RY / BY
Status register
Address register
Command register
Control circuit
TC58NYG1S3EBAI5
V_CC V_SS
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
V_CC
V_IN
V_I/O
P_D
T_SOLDER
T_STG
T_OPR
Power Supply Voltage
Input Voltage
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
−0.6 to 2.5
−0.6 to 2.5
−0.6 to V_CC + 0.3 (≤ 2.5 V)
0.3
260
−55 to 125
-40 to 85
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
C_IN
Input
V_IN = 0 V
⎯
C_OUT
Output
V_OUT = 0 V
⎯
* This parameter is periodically sampled and is not tested for every device.
MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3
2011-03-01C