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TC51WKM616AXBN75 Datasheet, PDF (6/11 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
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WRITE CYCLE 1 ( WE CONTROLLED) (See Note 8)
TC51WKM616AXBN75
Address
A0 to A21
WE
CE1
CE2
UB , LB
DOUT
I/O1 to I/O16
DIN
I/O1 to I/O16
tAS
tCH
(See Note 10)
(See Note 9)
tWC
tAW
tWP
tWR
tCW
tWR
tBW
tWR
tODW
tOEW
Hi-Z
tDS
tDH
VALID DATA IN
(See Note 11)
(See Note 9)
WRITE CYCLE 2 ( CE CONTROLLED) (See Note 8)
Address
A0 to A21
WE
CE1
CE2
UB , LB
DOUT
I/O1 to I/O16
DIN
I/O1 to I/O16
tAS
tCH
tWC
tAW
tWP
tWR
tCW
tWR
tBW
tWR
Hi-Z
tBE tODW
tCOE
(See Note 9)
Hi-Z
tDS
tDH
VALID DATA IN
2002-08-22 6/11
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