English
Language : 

TC51WKM616AXBN75 Datasheet, PDF (5/11 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TIMING DIAGRAMS
READ CYCLE
Address
A0 to A21
CE1
tRC
tACC
tCO
TC51WKM616AXBN75
tOH
CE2
tOE
OE
WE
tBA
UB , LB
DOUT
I/O1 to I/O16
Hi-Z
tBE
tOEE
tCOE
INDETERMINATE
PAGE READ CYCLE (8 words access)
tOD
tODO
tBD
VALID DATA OUT
Address
A0 to A2
Address
A3 to A21
tPM
tRC
tPC
tPC
tPC
CE1
CE2
OE
Fix-H
Hi-Z
Fix-H
WE
UB , LB
DOUT
I/O1 to I/O16
tBA
tOEE
tBE
Hi-Z
tCOE
tCO
tACC
tOE
tAOH
DOUT
tAA
tAOH
DOUT
tAA
tBD
tOD
tAOH
tOH
DOUT
DOUT
Hi-Z
tAA
tODO
* Maximum 8 words
2002-08-22 5/11