SSM5H07TU Datasheet, PDF (6/10 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Diode DC-DC Converter

3000
1000
300
100
30
10
3
1
1
|Y_fs| – I_D
Common Source
VDS = 5 V
Ta = 25°C
10
100
1000
Drain Current I_D (mA)
10000
Dynamic Input characteristic
10
9
8
7
6
5
VDD = 16 V
4
3
2
1
0
0
0.5
1
Common Source
ID = 1.2 A
Ta = 25°C
1.5
2
2.5
Total Gate Charge Q_g (nC)
I_DR – V_DS
2.5
Common Source
VGS = 0
2 ^{Ta = 25°C}
D
1.5 ^G
I_DR
S
1
0.5
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
Drain-Source Voltage V_DS (V)
SSM5H07TU
C – V_DS
500
300
100
50
30
Ciss
Coss
10
5
Common Source
3
Ta = 25°C
f = 1 MHz
VGS = 0 V
1
0.1
1
Crss
10
100
Drain-Source Voltage V_DS (V)
1000
toff
100
tf
ton
10
tr
t – I_D
Common Source
VDD = 10 V
VGS = 0∼-4 V
Ta = 25°C
RG = 4.7 Ω
1
10
100
1000
10000
Drain Current I_D (mA)
6
2007-11-01