SSM5H07TU Datasheet, PDF (5/10 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Diode DC-DC Converter

MOS Electrical Characteristics Graph
I_D – V_DS
2.5
Common Source
Ta = 25°C
VGS = 10 V
2
6V
4V
1.5
1
3V
0.5
2.5 V
0
0
0.4
0.8
1.2
1.6
2
Drain-Source Voltage V_DS (V)
R_{DS (ON)} – V_GS
1
ID = 0.6 A
Common Source
0.8
0.6
Ta = 100°C
0.4
25°C
0.2
−25°C
0
0
2
4
6
8
10
Gate-Source Voltage V_GS (V)
SSM5H07TU
I_D – V_GS
100
Common Source
VDS = 5 V
10
1
0.1
0.01
0.001
Ta = 100°C
25°C
−25°C
0.0001
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-Source Voltage V_GS (V)
R_{DS (ON)} – I_D
1
Common Source
Ta = 25°C
0.8
0.6
VGS = 4 V
0.4
10 V
0.2
0
0
0.5
1
1.5
2
2.5
Drain Current I_D (A)
R_{DS (ON)} – Ta
1
Common Source
ID = 0.6 A
0.8
0.6
VGS = 4 V
0.4
0.2
10 V
0
−25
0
25 50
75 100 125 150
Ambient Temperature Ta (°C)
V_th – Ta
2
Common Source
VDS = 5V
1.6
ID = 0.1mA
1.2
0.8
0.4
0
−25 0
25
50
75
100 125 150
Ambient Temperature Ta (°C)
5
2007-11-01