SSM5H07TU Datasheet, PDF (3/10 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Diode DC-DC Converter

SSM5H07TU
MOSFET
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain-Source breakdown voltage
Drain Cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note 4: Pulse measurement
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±20 V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
1.1
⎯
2.3
V
|Y_fs|
V_DS = 3 V, I_D = 0.75 A
(Note 4) ⎯
1.1
⎯
S
R_{DS (ON)}
I_D = 0.6 A, V_GS = 10 V
I_D = 0.6 A, V_GS = 4 V
(Note 4) ⎯
(Note 4) ⎯
240 320
mΩ
400 540
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
36
⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
10
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
30
⎯
pF
t_on
V_DD = 10 V, I_D = 0.6 A
t_off
V_GS = 0~2.5 V, R_G = 4.7 Ω
⎯
21
⎯
ns
⎯
8
⎯
Switching Time Test Circuit
(a) Test circuit
4V
IN
0
10 μs
OUT
V_DD = 10 V
R_G = 4.7 Ω
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
Common source
Ta = 25°C
(b) V_IN
2.5 V
0V
(c) V_OUT ^VDD
10%
90%
90%
V_DD
V_{DS (ON)}
10%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as voltage between gate and source when the low operating current value is I_{D =} 100 μA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires a
lower voltage than V_th.
(The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Be sure to take this into consideration when using the device.
3
2007-11-01