SSM5H07TU Datasheet, PDF (4/10 Pages) Toshiba Semiconductor – Silicon Epitaxial Schottky Barrier Diode DC-DC Converter

Schottky Diode
Electrical Characteristics (Ta = 25°C)
SSM5H07TU
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
I_R
C_T
Test Condition
I_F = 0.3 A
I_F = 0.5 A
V_R = 12V
V_R = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
0.33 0.39
V
⎯
0.37 0.43
V
⎯
⎯
100
μA
⎯
80
⎯
pF
Precaution
The schottky barrier diodes of this product have large-reverse-current-leakage characteristics compared to
other switching diodes. This current leakage and improper operating temperature or voltage may cause
thermal runaway resulting in breakdown. Take forward and reverse loss into consideration in radiation design
and safety design.
4
2007-11-01