TLN105B_07 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

Wavelength Characteristic
1.2
IF = 50mA
Ta = 25°C
1.0
(typ.)
0.8
0.6
0.4
0.2
0
860 880
900 920 940 960
Wavelength λ (nm)
980 1000
TLN105B(F)
Radiation Pattern
(typ.)
(Ta = 25°C)
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative intensity
5
2007-10-01