TLN105B_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

I_EP – I_FP
1000
Pulse width ≦ 100μs
Repetitive frequency
500 _{= 100Hz}
300 Ta = 25°C
100
50
30
(typ.)
10
5
3
1
0.5
0.3
0.1
1
3 5 10
30
100
300
1000
Pulse forward current I_FP (mA)
Distance Characteristics
100
1000
IE = 20mW / sr
10
100
IE = 10mW / sr
1
10
0.1
1
1
3 5 10
30 50 100
300
Distance d (mm)
TLN105B(F)
Relative I_E – Ta
(typ.)
1.4
IF = 50mA
1.2
1.0
0.8
0.6
0.4
0.2
0
-40 -20
0
20
40
60
80 100
Ambient temperature Ta (°C)
Distance Characteristics
100
1000
I_EP = 200mW / sr at I_FP ~300mA,
f = 100Hz, PW = 100μs
10
100
1
10
0.1
1
0.01
0.1
0.01
0.001
0.01
I_E = 20mW / sr at I_F ~50mA
0.1
1
Distance d (m)
0.001
0.0001
10
4
2007-10-01