TLN105B_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

TLN105B(F)
Precautions
Please be careful of the followings.
1. Soldering must be performed under the lead stopper.
2. Soldering temperature: 260°C max
Soldering time: 5s max
3. When forming the leads, bend each lead under the stopper without leaving forming stress to the body of the
device. Soldering must be performed after the leads have been formed.
4. Radiation intensity falls over time due to the current which flows in the infrared LED.
When designing a circuit, take into account this change in radiant power over time.
The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1.
I_E (t) ₌ P_O (t)
I_E (0) P_O (0)
2
2007-10-01