TLN105B_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

I_F – Ta
120
100
80
60
40
20
0
0
20 40
60 80 100 120 140
Ambient temperature Ta (°C)
‐2.4
‐2.0
‐1.6
‐1.2
‐0.8
‐0.4
1
ΔV_F / ΔTa – I_F
35
10
30 50
100
Forward current I_F (mA)
Ta = 25°C
1000
500
300
I_FP – P_W
f = 100Hz
100
50
30
3μ
10k 5k 2k 1k 500 200
10μ 30μ 100μ 300μ 1m 3m 10m
Pulse width P_W (s)
TLN105B(F)
100
Ta = 25°C
50
30
I_F – V_F
(typ.)
10
5
3
1
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage V_F (V)
I_FP – V_FP
(typ.)
1000
500
300
100
50
30
10
5
Pulse width ≦ 100μs
3
Repetitive frequency
= 100Hz
Ta = 25°C
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Pulse forward voltage V_FP (V)
3
2007-10-01