SSM6J53FE Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6J53FE
1000
r_th – t_w
Single Pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
10
Pulse width t_w (s)
100
1000
Safe operating area
-10
ID max (Pulsed) *
-3
ID max (Continuous)
-1
1 ms*
10 ms*
-0.4
10s*
DC operation
-0.1
Ta = 25°C
-0.03
-0.01
Mounted on FR4 board
(25.4 mm × 25.4 _2mm × 1.6 t
Cu pad: 645 mm )
* Single Non-repetitive Pulse
Ta = 25°C
-0.003 _{Curves must be derated}
linearly with increase in
temperature.
-0.001
-0.1 -0.3
-1
-3
-10
-30
-100
Drain-Source voltage V_DS (V)
600
500
400
300
200
100
0
0
P_D – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
50
100
150
Ambient temperature Ta (°C)
5
2007-11-01