SSM6J53FE Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6J53FE
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM6J53FE
○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5 V drive
• Suitable for high-density mounting due to compact package
• Low on-resistance : R_on = 136 mΩ (max) (@V_GS = -2.5 V)
: R_on = 204 mΩ (max) (@V_GS = -1.8 V)
: R_on = 364 mΩ (max) (@V_GS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
-20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
-1.8
A
-3.6
Drain power dissipation
P_D (Note 1)
500
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm²)
Electrical Characteristics (Ta = 25°C)
Unit : mm
1.6±0.05
1.2±0.05
1
6
2
5
3
4
1,2,5,6 :Drain
3 :Gate
4 :Source
ES6
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-2N1A
Weight: 7.0 mg (typ.)
Characteristics
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Total gate charge
Gate-Source charge
Gate-Drain charge
Drain-Source forward voltage
Note 2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = −1 mA, V_GS = 0
V _{(BR) DSX} I_D = −1 mA, V_GS = +8 V
−20 ⎯
⎯
V
−12 ⎯
⎯
I_DSS
V_DS = −20 V, V_GS = 0
⎯
⎯
−10
μA
I_GSS
V_GS = ± 8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = −3 V, I_D = −1 mA
−0.3
⎯
−1.0
V
|Y_fs|
V_DS = −3 V, I_D = −0.9 A (Note 2) 2.7
5.4
⎯
S
I_D = −1.0 A, V_GS = −2.5 V (Note 2) ⎯
95 136
R_{DS (ON)} I_D = −1.0 A, V_GS = −1.8 V (Note 2) ⎯
122 204 mΩ
I_D = −0.1 A, V_GS = −1.5 V (Note 2) ⎯
137 364
C_iss
C_oss
C_rss
V_DS = −10 V, V_GS = 0
f = 1 MHz
⎯
568
⎯
⎯
75
⎯
pF
⎯
67
⎯
t_on
V_DD = −10 V, I_D = −0.9 A
t_off
V_GS = 0 ~ −2.5 V, R_G = 4.7 Ω
⎯
29
⎯
ns
⎯
39
⎯
Q_g
Q_gs
V_DS = −16 V, I_DS = -1.8 A,
V_GS = − 4 V
Q_gd
⎯ 10.6 ⎯
⎯
7.4
⎯
nC
⎯
3.3
⎯
V_DSF
I_D = 1.8 A, V_GS = 0
(Note 2)
⎯
0.8
1.2
V
1
2007-11-01