SSM6J53FE Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6J53FE
-4
-4 V
-3.5
I_D – V_DS
-1.5 V
-3
-2.5
-2
-1.5
-1
-0.5
0
0
-2.5 V
-1.8 V
VGS = -1.2 V
Common Source
Ta = 25°C
-0.5
-1
-1.5
-2
Drain - Source voltage V_DS (V)
-10000
-1000
Common Source
VDS = -3 V
I_D – V_GS
-100
-10
-1
-0.1
Ta = 85 °C
25 °C
−25 °C
-0.01
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
Gate - Source voltage V_GS (V)
R_{DS (ON)} – V_GS
400
ID = -0.1 A
Common Source
300
200
25 °C
Ta = 85 °C
100
0
0
-2
−25 °C
-4
-6
-8
Gate - Source voltage V_GS (V)
R_{DS (ON)} – I_D
450
Common Source
400 _{Ta = 25 °C}
350
300
250
VGS = -1.5 V
200
150
-1.8 V
100
-2.5 V
50
0
0
-1
-2
-3
-4
Drain current I_D (A)
R_{DS (ON)} – V_GS
400
ID = -1.0 A
Common Source
300
200
25 °C
Ta = 85 °C
100
−25 °C
0
0
-2
-4
-6
-8
Gate - Source voltage V_GS (V)
R_{DS (ON)} – Ta
500
Common Source
400
300
ID = -0.1 A / VGS = -1.5 V
-1.0 A / -1.8 V
200
100
0
−50
-1.0 A / -2.5 V
0
50
100
150
Ambient temperature Ta (°C)
3
2007-11-01