SSM6J53FE Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – High-Speed Switching Applications

-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
−25
V_th – Ta
Common Source
VDS = -3 V
ID = -1 mA
0
25 50
75 100 125 150
Ambient temperature Ta (°C)
SSM6J53FE
30
Common Source
10 VDS = -3 V
Ta = 25 °C
3
|Y_fs| – I_D
1
0.3
0.1
0.03
0.01
1
-10
-100
-1000
Drain current I_D (mA)
-10000
5000
3000
C – V_DS
1000
500
Ciss
300
100
50 ^Common
Source
30 _{Ta = 25 °C}
f = 1 MHz
VGS = 0 V
10
-0.1
-1
Coss
Crss
-10
-100
Drain – Source voltage V_DS (V)
Dynamic Input Characteristic
-10
-9
-8
-7
-6
VDD = -16 V
-5
-4
-3
-2
Common Source
-1
ID = -1.8 A
Ta = 25 °C
0
0
5
10
15
20
25
Total gate charge Q_g (nC)
1000
toff
t – I_D
100
tf
ton
10
tr
1
0.01
Common Source
VDD = -10 V
VGS = 0 ∼ -2.5 V
Ta = 25 °C
RG = 4.7 Ω
0.1
1
10
Drain current I_D (A)
I_DR – V_DS
-2
Common Source
VGS = 0 V
Ta = 25 °C
-1.5
G
D
I_DR
S
-1
-0.5
00
0.2
0.4
0.6
0.8
1
1.2
Drain-Source voltage V_DS (V)
4
2007-11-01