SSM3K14T_07 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type DC-DC Converter

SSM3K14T
Safe operating area
10
ID max (pulsed)
ID max (continuous)
1 ms*
10 ms*
1.5
t = 10 s
1.25
1
P_D – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 645 mm2)
1
DC operation
Ta = 25°C
10 s*
0.75 ^DC
0.5
0.25
0.1
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
Cu pad: 645 mm2)
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1
1
VDSS max
10
Drain-Source voltage V_DS (V)
1000
100
r_th – tw
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
100
10
1
0.001
0.01
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu pad: 645 mm )
0.1
1
10
100
1000
Pulse width tw (s)
5
2007-11-01