SSM3K14T_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type DC-DC Converter

SSM3K14T
100
VDS = 5 V
50 ^{Common Source}
Ta = 25°C
30
|Y_fs| – I_D
10
5
3
1
0.5
0.3
0.1
0.01
0.1
1
10
Drain current ID (A)
1000
500
300
C – V_DS
Ciss
100
50
Common Source
30 _{VGS = 0}
f = 1 MHz
Ta = 25°C
10
0.1
1
Coss
Crss
10
100
Drain-Source voltage VDS (V)
Dynamic Input Characteristic
10
12 V
8
VDD = 24 V
6
4
2
ID = 4 A
Common Source
Ta = 25°C
0
0
2
4
6
8
10
12
Total Gate charge Qg (nC)
1000
500
300
100
50
30
10
5
3
toff
tf
t – I_D
VDD = 15 V
Common Source
VGS = 0~4 V
Rg = 10 Ω
Ta = 25°C
ton
tr
1
0.01
0.1
1
10
Drain current ID (A)
4
Common Source
3.5 ^{VGS = 0}
Ta = 25°C
3
D
I_DR – V_DS
2.5
G
IDR
2
S
1.5
1
0.5
0
0
−0.2
−0.4
−0.6
−0.8
−1
Drain-Source voltage VDS (V)
4
2007-11-01