SSM3K14T_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type DC-DC Converter

9
10 4.5 4
8
7
I_D – V_DS
Common Source
Ta = 25°C
3.3
6
5
3.0
4
3
2.8
2
VGS = 2.6 V
1
0
0.5
1
1.5
2
Drain-Source voltage VDS (V)
SSM3K14T
10000
1000
100
10
1
0.1
0.01
0
I_D – V_GS
Ta = 100°C
25°C
−25°C
VDS = 5 V
Common Source
1
2
3
4
Gate-Source voltage VGS (V)
R_{DS (ON)} –I_D
100
Common Source
Ta = 25°C
80
60
VGS = 4 V
4.5 V
40
10 V
20
0
0
2
4
6
8
10
Drain current ID (A)
R_{DS (ON)} – V_GS
200
Common Source
ID = 2 A
160
120
80
Ta = 100°C
25
40
−25°C
0
0
2
4
6
8
10
12
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
100
ID = 2 A
Common Source
80
VGS = 4 V
60
4.5 V
40
10 V
20
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
VDS = 5 V
ID = 0.1 mA
2.5
Common Source
V_th – Ta
2
1.5
1
0.5
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
2007-11-01