SSM3J13T_07 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

SSM3J13T
Safe operating area
−10
ID max (pulsed)
ID max (continuous)
10 ms*
−1
10 s*
DC
operation
−0.1 Mounted on FR4 board
(25.4 mm × 25.4 mm
× 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
−0.01
−0.1
Curves must be derated
linearly with increase in
temperature.
−1
VDSS
max
−10
Drain-Source voltage V_DS (V)
1000
100
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
−100
r_th – tw
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
Pulse width tw (s)
100
1000
5
2007-11-01