SSM3J13T_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

V_th – Ta
−1
Common Source
VDS = −3 V
−0.8
ID = −0.1 mA
−0.6
−0.4
−0.2
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
SSM3J13T
1400
1200
1000
800
600
400
200
0
0
C – V_DS
Common Source
VGS = 0
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
2
4
6
8
10
12
14
Drain-Source voltage VDS (V)
1000
500
300
100
50
30
10
−0.01
t – I_D
toff
tf
Common Source
VDD = −10 V
VGS = 0∼ −2.5 V
Ta = 25°C
RG = 4.7 Ω
ton
tr
−0.1
−1
−10
Drain current ID (A)
−3
Common Source
I_DR – V_DS
VGS = 0
Ta = 25°C
D
G
−2
S
−1
0
0
0.4
0.8
1.2
Drain-Source voltage VDS (V)
1.5
t = 10 s
1.25
1
P_D – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
0.75 DC
0.5
0.25
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
4
2007-11-01