SSM3J13T_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

−4
−4 V
−3
I_D – V_DS
−2.5 V
−2.0 V
−1.8 V
Common Source
Ta = 25°C
−1.6 V
−1.5 V
−2
−1.4 V
−1
VGS = −1.2 V
0
0
−0.5
−1
−1.5
−2
Drain-Source voltage VDS (V)
SSM3J13T
−10000
Common Source
VDS = −3 V
−1000
−100
−10
I_D – V_GS
75°C
Ta = 25°C
−25°C
−1
−0.1
−0.01
0
−0.5
−1
−1.5
−2
Gate-Source voltage VGS (V)
R_{DS (ON)} –I_D
250
Common Source
Ta = 25°C
200
150
VGS = −2 V
100
−2.5 V
−4 V
50
0
0
−2
−4
−6
Drain current ID (A)
500
400
300
200
100
0
0
R_{DS (ON)} – V_GS
Common Source
ID = −1.5 A
Ta = 25°C
−2
−4
−6
−8
Gate-Source voltage VGS (V)
160
Common
140 Source
ID = −1.5 A
120
100
80
60
R_{DS (ON)} – Ta
VGS = −2 V
−2.5 V
−4 V
40
20
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
|Y_fs| – I_D
100
Common Source
VDS = −3 V
Ta = 25°C
10
1
0.1
−0.01
−0.1
−1
−10
Drain current ID (A)
3
2007-11-01