HN7G02FU Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Multi Chip Discrete Device

100
Common source
VDS = 3 V
50 Ta = 25°C
ïY_fsï – I_D
30
10
5
3
0.5 1
35
10
30 50 100
Drain current I_D (mA)
HN7G02FU
100
50
30
10
5
3
1
05
03
0.1
C – V_DS
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
0.3 0.5 1
35
10
20
Drain-source voltage V_DS (V)
3000
Common source
VGS = 2.5 V
1000 _{Ta = 25°C}
V_{DS (ON)} – I_D
500
300
100
50
30
10
5
0.5 1
35
10
30 50 100
Drain current I_D (mA)
t – I_D
1000
toff
tf
100 ^ton
tr
2.5 V
VN
0
10 ms
10
0.3
1
3
ID _{VOUT D.U. <= 1%}
VIN: tr, tf < 5 ns
(Zout = 50 W)
VDD = 3 V
Common source
Ta = 25°C
10
30
100
Drain current I_D (mA)
P_D – Ta
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
5
2003-03-12