HN7G02FU Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Multi Chip Discrete Device

Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input resistor
Symbol
I_CBO
I_EBO
h_FE
V_{CE (sat)}
R1
Test Condition
V_CB = -50 V, I_E = 0
V_EB = -5 V, I_C = 0
V_CE = -5 V, I_C = -1 mA
I_C = 5 mA, I_B = -0.25 mA
¾
Q2 (MOS-FET) Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
ïY_fsï
R_{DS (ON)}
V_GS = 10 V, V_DS = 0
I_D = 100 mA, V_GS = 0
V_DS = 20 V, V_GS = 0
V_DS = 3 V, I_D = 0.1 mA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA V_GS = 2.5 V
HN7G02FU
Min Typ. Max Unit
¾
¾ -100 nA
¾
¾ -100 nA
120
¾
400
¾
-0.1 -0.3
V
3.29 4.7 6.11 kW
Min Typ. Max Unit
¾
¾
1
mA
20
¾
¾
V
¾
¾
1
mA
0.5
¾
1.5
V
20
¾
¾
mS
¾
20
40
W
2
2003-03-12