HN7G02FU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Multi Chip Discrete Device

Q1 (Transistor)
-50
-30
I_C – V_{I (ON)}
-10
-5 ^{Ta = 100°C}
25
-3
-25
-1
-0 5
-0 3
-0.1
Common emitter
VCE = -0 2 V
-0.3
-1
-3
-10
-30
Input voltage V_{I (ON)} (V)
-100
HN7G02FU
-3000
I_C – V_{I (OFF)}
-1000
-500
Ta = 100°C ²⁵
-25
-300
-100
-50
-30
-0
Common emitter
VCE = -5 V
-0 2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6
Input voltage V_{I (OFF)} (V)
-3000
h_FE – I_C
-1000
-500
-300
-100
-50
-30
-10
-0.1
Ta = 100°C
25
-25
Common emitter
VCE = -5 V
-0.3
-1
-3
-10
-30
-100
Collector current I_C (mA)
V_{CE (sat)} – I_C
-3
-1
-0 5
-0 3
-0.1
-0.05
-0.03
-0.01
-0.1
Ta = 100°C
25
-25
Common emitter
IC/IB = 20
-0 3
-1
-3
-10
-30
-100
Collector current I_C (mA)
3
2003-03-12