HN7G02FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Multi Chip Discrete Device

TOSHIBA Multi Chip Discrete Device
HN7G02FU
Power Management Switch Application, Inverter Circuit
Application, Driver Circuit Application and Interface
Circuit Application.
HN7G02FU
Unit: mm
Q1 (transistor): RN2110 Equivalent
Q2 (MOS-FET): 2SK1830 Equivalent
Q1 (Transistor) Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
-50
-50
-5
-100
Q2 (MOS-FET) Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Symbol
V_DS
V_GSS
I_D
Rating
20
10
50
Q1, Q2 Common Ratings (Ta = 25°C)
Characteristics
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating
Symbol
P_C
(Note)
T_j
T_stg
Rating
200
150
-55~150
Unit
V
V
V
mA
JEDEC
―
JEITA
―
Unit
TOSHIBA
―
V
Weight: g (typ.)
V
mA
Marking
Unit
FT
mW
°C
°C
Equivalent Circuit (top view)
654
Q1
Q2
123
1
2003-03-12