2SJ680 Datasheet, PDF (5/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)

2SJ680
r_th – t_w
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.05
0.02
0.03
Single pulse
0.01
0.01
0.005
0.003
0.001
10 µ
100 µ
1m
10 m
100 m
Pulse width t_w (S)
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1
10
100
Safe operating area
−30
ID max (pulse) *
−10
−5
−3
1 ms*
100 µs*
−1
−0.5
−0.3
DC
operation
−0.1
−0.05 * Single nonrepetitive pulse
−0.03 Tc = 25°C
Curves must be derated
−0.01 ^{linearly with increase in}
temperature.
−0.005
−0.1 −0.3 −1
−3
−10
VDSS max
−30 −100 −300
Drain-source voltage V_DS (V)
E_AS – T_ch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch (°C)
15 V
−15 V
B_VDSS
I_AR
V_DD
V_DS
Test circuit
R_G = 25 Ω
V_DD = −50 V, L = 25.2 mH
Waveform
Ε_AS
=
1
2
⋅L ⋅I2
⋅ _{⎜⎜⎝⎛}
BVDSS
BVDSS ^− VDD
⎟⎟⎠⎞
5
2004-12-24