2SJ680 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)

2SJ680
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)
2SJ680
Switching Applications
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
• Low drain-source ON-resistance: R_{DS (ON)} = 1.6 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.0 S (typ.)
• Low leakage current: I_DSS = −100 µA (max) (V_DS = −200 V)
• Enhancement model: V_th = −1.5 ~ −3.5 V (V_DS = −10 V, I_D = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−200
V
−200
V
±20
V
−2.5
A
−10
20
W
97.5
mJ
−2.5
A
2.0
mJ
150
°C
−55~150
°C
６．５±０．２
５．２±０．２
Unit: mm
０．６ MAX．
０．９
２．３ ２．３
１．１±０．２
０．６ MAX
１２３
０．８ MAX．
１．1 MAX．
０．６±０．１５
０．６±０．１５
JEDEC
―
JEITA
―
TOSHIBA
2-7J2B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = −50 V, Tch = 25°C (initial), L = −25.2 mH, I_AR = −2.5 A R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2004-12-24