|
2SJ680 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V) | |||
|
◁ |
ID â VDS
â2.0
Common source
â8
â6 â5 â4.8
Tc = 25°C
â10
pulse test
â1.6
â15
â4.6
â1.2
â4.4
â0.8
â4.2
VGS = â4 V
â0.4
0
0
â1
â2
â3
â4
â5
Drain-source voltage VDS (V)
â10
Common source
VDS = â10 V
â8 pulse test
ID â VGS
Tc = â55°C
â6
25
â4
100
â2
0
0
â2
â4
â6
â8
â10
Gate-source voltage VGS (V)
10
Common source
VDS = â10 V
pulse test
âªYfs⪠â ID
Tc = â55°C
25
100
1
2SJ680
â5
â10
â4 â15
â3
â2
â1
ID â VDS
â6
Common source
Tc = 25°C, pulse test
â8
â5.75
â5.5
â5.25
â5
â4.8
â4.6
â4.4
â4.2
VGS = â4 V
0
0
â10
â20
â30
â40
â50
Drain-source voltage VDS (V)
â10
â8
â6
â4
â2
0
0
VDS â VGS
Common source
Tc = 25°C
pulse test
ID = â2.5 A
â1.5
â0.8
â4
â8
â12
â16
â20
Gate-source voltage VGS (V)
RDS (ON) â ID
10
Common source
Tc = 25°C
pulse test
VGS = â10 V
â15
1
0.1
â0.1
â1
Drain current ID (A)
0.1
â10
â0.1
3
â1
â10
Drain current ID (A)
2004-12-24
|
▷ |