2SJ680 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type (π-MOS V)

2SJ680
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
I_DSS
V _{(BR) DSS}
V_th
R_{DS (ON)}
⎪Y_fs⎪
C_iss
C_rss
C_oss
V_GS = ±16 V, V_DS = 0 V
V_DS = −200 V, V_GS = 0 V
I_D = −10 mA, V_GS = 0 V
V_DS = −10 V, I_D = −1 mA
V_GS = −10 V, I_D = −1.5 A
V_DS = −10 V, I_D = −1.5 A
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
⎯
⎯ ±10 µA
⎯
⎯ −100 µA
−200 ⎯
⎯
V
−1.5 ⎯ −3.5
V
⎯
1.6 2.0
Ω
1.0
2.0
⎯
S
⎯ 410 ⎯
⎯
40
⎯
pF
⎯ 145 ⎯
t_r
0V
V_GS
t_on
−10 V
I_D = −1.5 A V_OUT
⎯
20
⎯
⎯
45
⎯
R_L = 66.7 Ω
ns
t_f
⎯
15
⎯
t_off
Duty ^<= 1%, t_w = 10 µs ^{VDD ∼− −100 V}
⎯
85
⎯
Q_g
V_DD ∼− −160 V, V_GS = −10 V,
Q_gs
I_D = −2.5 A
Q_gd
⎯
10
⎯
⎯
6
⎯
nC
⎯
4
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I_DR
I_DRP
V_DSF
t_rr
Q_rr
Test Condition
⎯
⎯
I_DR = −2.5 A, V_GS = 0 V
I_DR = −2.5 A, V_GS = 0 V,
dI_DR/dt = 100 A/µs
Min Typ. Max Unit
⎯
⎯ −2.5
A
⎯
⎯ −10
A
⎯
⎯
2.0
V
⎯ 135 ⎯
ns
⎯ 0.81 ⎯
µC
Marking
J680
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2004-12-24